Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1980-10-06
1983-06-21
Popek, Joseph A.
Static information storage and retrieval
Read/write circuit
Bad bit
371 8, G11C 1140
Patent
active
043897150
ABSTRACT:
A redundancy scheme is described for replacing defective main memory cells in a dynamic RAM with spare memory cells. The spare cells are arranged in groups of spare rows and spare columns of memory cells such that a plurality of groups of spare rows and columns of cells are substituted for defective main rows and columns of cells so as to repair relatively large defects which impair adjacent rows and columns of main memory cells. In the preferred embodiment, the RAM includes a plurality of address buffers, each of which receives an incoming row address bit and then an incoming column address bit for sequentially outputting row and column address data. Associated with each buffer is a store for a defective row address, a store for a defective column address, and a comparator. The stores retain defective memory cell addresses which the comparator sequentially compares against the address data sequentially output by the buffer. When the comparator senses a match, a control signal is generated to initiate substitution of spare memory cells for the defective main memory cells.
REFERENCES:
patent: 4047163 (1977-09-01), Choate et al.
patent: 4250570 (1981-02-01), Tsang et al.
patent: 4310901 (1982-01-01), Harding et al.
Eaton, Jr. Sargent S.
Wooten David R.
Inmos Corporation
Manzo Edward D.
Popek Joseph A.
LandOfFree
Redundancy scheme for a dynamic RAM does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Redundancy scheme for a dynamic RAM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Redundancy scheme for a dynamic RAM will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2113195