Static information storage and retrieval – Systems using particular element – Capacitors
Patent
1996-07-02
1997-11-25
Nelms, David C.
Static information storage and retrieval
Systems using particular element
Capacitors
365102, G11C 1124
Patent
active
056919352
ABSTRACT:
A memory element that includes a stored charge element coupled to a bi-directional voltage dropping element that exhibits substantially definite voltage drops when conducting in each direction is the basis for a family of memory cells and circuits. An extremely compact dynamic memory cell (200) capable of being stacked includes a capacitor (204) or any other suitable stored charge device, and a voltage dropping element such as a Zener diode (208), a pair of parallel, reverse-connected diodes (910, 920), or any other suitable voltage dropping device having substantially definite voltage drop thresholds when conducting in each direction. Another type of dynamic memory (1000) is read through a transistor (1020) to provide non-destructive reads. Another type of dynamic memory (1200) has column bit lines (1212) that are shared by adjacent cells having memory elements (1230, 1240). An SRAM cell (1300, 1400) is made of a latch (1310) that is accessed through a memory element (1320, 1420). A dynamic register (1500, 1700) is made from several stages (1510 and 1550, 1710 and 1750), each of which includes a master stage (1520, 1720) followed by a slave stage (1530, 1730). The master and slave stages contain memory elements. The various circuits are operated using suitable voltages and voltage sequences.
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Neil H. E. Weste, AT&T Bell Laboratories and Kamran Esgraghian, University of Adelaide; Principles of CMOS VLSI Design A System Perspective; 1995; Chapter 8, pp. 362-364; by AT&T Bell Laboratories, and Kamran Eshraghian; United States and Canada.
Carroll David H.
Nelms David C.
Niranjan F.
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