Method of planarizing silicon dioxide in semiconductor devices

Details Method of planarizing silicon dioxide in semiconductor devices Method of planarizing silicon dioxide in semiconductor devices

1980-12-16

1983-06-21

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566591, 1566611, 156662, 430313, 252 793, H01L 21306, C03C 1500

Patent

active

043892817

ABSTRACT:
The present invention provides a method for planarizing a non-uniform thickness of oxide, for example silicon dioxide as is formed over oxide-filled trenches used in deep dielectric isolation in integrated circuits. The oxide is removed by a planarizing resist-etching process so that etching in thicker resist areas proceeds at a rate slower than etching in thinner resist areas. A referred etchant is HF gas and etching is preferably at an elevated temperature.

REFERENCES:
patent: 3976524 (1976-08-01), Feng
patent: 4127437 (1978-11-01), Bersin et al.
patent: 4239793 (1980-12-01), Matsuura et al.
patent: 4307179 (1981-12-01), Chang et al.
Bersin, R. L., & Reichelderfer, R. F., "The DryOx Process for Etching Silicon Dioxide", Solid State Technology, vol. 20, No. 4, (Apr. 1977), pp. 78-80.
Ru et al, "A New Conformal Dry-Etch Technique for Submicrometer Structures", J. Vac. Sci. Technol., 19(4) (Nov./Dec. 1981), pp. 1385-1389.
IBM Tech. Disclosure Bulletin, vol. 22, No. 9, (2/80), "Method for Improving Reliability of Schottky Diodes", by Anantha et al, pp. 4042-4043.
Process for Providing Deep Trench Silicon Isolation, Burkhardt et al, IBM Technical Disclosure Bulletin, vol. 22, No. 5, Oct. 1979.
Dielectric Isolation Planarization, Bartush, Pogge, Wilsarg, IBM Technical Disclosure, vol. 21, No. 5, Oct. 1978.

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