Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-12-23
1997-11-25
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257377, 257382, 257383, 257758, 257768, 257774, H01L 2976
Patent
active
056915616
ABSTRACT:
The present invention relates to a semiconductor device having complementary field effect transistors and a method for manufacturing the same. The object of the present invention is to provide a semiconductor device and a method for manufacturing the same in which is decreased the silicide formation area for connecting a p-type impurity region and an n-type impurity region in the dual gate structure. It comprises steps of covering the silicide formation area of a semiconductor layer with an oxidation resisting sidewall formed in a self-aligned fashion, ion-implanting p-type and n-type impurities with the oxidation resisting sidewall as a mask, patterning the semiconductor layer to form a dual gate pattern, oxidizing a surface of the dual gate pattern with the oxidation resisting sidewall as a mask, selectively removing the oxidation resisting sidewall, and followed by making silicide at its surface exposed by the removal of the oxidation resisting sidewall.
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Fujitsu Limited
Wojciechowicz Edward
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