Nonvolatile semiconductor memory device and method of manufactur

Details Nonvolatile semiconductor memory device and method of manufactur Nonvolatile semiconductor memory device and method of manufactur

1994-09-30

1997-11-25

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257408, 257345, H01L 29788

Patent

active

056915608

ABSTRACT:
Under an N.sup.- -drain region covering an N.sup.+ -drain region, a P.sup.+ -impurity region is formed without covering an end of the N.sup.- -drain region near a channel region. Thereby, the P.sup.+ -impurity region suppresses a punch-through phenomenon, while the N.sup.- -drain region prevents a leak current due to interband tunneling.

REFERENCES:
patent: 4868619 (1989-09-01), Mukherjee et al.
patent: 4939558 (1990-07-01), Smayling et al.
patent: 5422506 (1995-06-01), Zamapian

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