Technique for producing small islands of silicon on insulator

Details Technique for producing small islands of silicon on insulator Technique for producing small islands of silicon on insulator

1996-09-04

1997-11-25

Dang, Trung

Fishing, trapping, and vermin destroying

437 61, 437 67, 437 72, 148DIG50, H01L 2176

Patent

active

056912307

ABSTRACT:
Using sub-micron technology, silicon on insulator (SOI) rows and islands are formed in a silicon substrate. Trenches are directionally-etched in the silicon substrate, leaving rows of silicon between the trenches. Silicon nitride is then deposited over the trenches, extending partly down the sides of the trenches. An isotropic chemical etch is then used to partially undercut narrow rows of silicon in the substrate. A subsequent oxidation step fully undercuts the rows of silicon, isolating the silicon rows from adjacent active areas. Devices, such as transistors for CMOS and DRAMs, are then formed in active areas, wherein the active areas are defined on the silicon rows by LOCal Oxidation of Silicon (LOCOS).

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