Static random access memory resistant to soft error

Details Static random access memory resistant to soft error Static random access memory resistant to soft error

1992-10-27

1994-04-12

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

3072963, 365227, 365228, G11C 700

Patent

active

053031903

ABSTRACT:
A static random access memory (30), resistant to soft error from alpha particle emissions has a high density array of memory cells (44) coupled to word lines (73 and 74) and bit line pairs (68), and operates at low power supply voltages (for example, 3.3 volts). A charging circuit (55) boosts a supply voltage to the memory array above the power supply voltage. The charging circuit (55) includes an oscillator (57), a charge pump (56), and a voltage regulator (58). The boosted supply voltage reduces the effect of an alpha particle hitting the memory array (44) at low power supply voltages. Providing a boosted supply voltage to the memory array (44) improves soft error resistance without adding capacitance to each memory cell (52 and 54).

REFERENCES:
patent: 4418402 (1983-11-01), Heagerty et al.
patent: 4532609 (1985-07-01), Iizuka
patent: 4590508 (1986-05-01), Hirakawa et al.
patent: 4592026 (1986-05-01), Matsukawa et al.
patent: 4725981 (1988-02-01), Rutledge
patent: 4805148 (1989-02-01), Diehl-Nagle et al.
patent: 4879690 (1989-11-01), Anami et al.
patent: 4964084 (1990-10-01), Jung et al.
patent: 5046052 (1991-09-01), Miyaji et al.
patent: 5057893 (1991-10-01), Sheng et al.
patent: 5103113 (1992-04-01), Inui et al.
patent: 5138190 (1992-08-01), Yamazaki et al.
patent: 5189641 (1993-02-01), Arakawa
Barbara Chappell et al., "Stability and SER Analysis of Static RAM Cells", IEEE Transactions on Electron Devices, vol. ED-32, No. 2, Feb. 1985, pp. 465-470.
Paul M. Carter et al., "Influences on Soft Error Rates in Static RAM's", IEEE Journal of Solid-State Circuits, vol. SE-22, No. 3, Jun. 1987, pp. 431-432.

Affiliated with

Also associated with

Rating

Static random access memory resistant to soft error does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Static random access memory resistant to soft error, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Static random access memory resistant to soft error will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2104567