Scalable and reliable integrated circuit inter-level dielectric

Details Scalable and reliable integrated circuit inter-level dielectric Scalable and reliable integrated circuit inter-level dielectric

1998-08-31

2000-09-26

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257759, 257760, 257775, 257748, 257730, 257752, H01L 5100

Patent

active

061246409

ABSTRACT:
An inter-level dielectric (ILD) is formed from a lower barrier layer comprising a conformal silicon oxynitride layer, a gap fill layer comprising a high-density plasma (HDP) oxide and a cap layer. The use of HDP oxide as a gap fill layer enables better control of the ILD thickness, avoids outgasing problems, facilitates via formation and reduces planarization.

REFERENCES:
patent: 5407860 (1995-04-01), Stoltz et al.
patent: 5470802 (1995-11-01), Gnade et al.
patent: 5486493 (1996-01-01), Jeng
patent: 5512775 (1996-04-01), Cho
patent: 5661344 (1997-08-01), Havemans et al.
patent: 5747880 (1998-05-01), Havemann et al.
patent: 5818111 (1998-10-01), Jeng et al.

Affiliated with

Also associated with

Rating

Scalable and reliable integrated circuit inter-level dielectric does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Scalable and reliable integrated circuit inter-level dielectric, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Scalable and reliable integrated circuit inter-level dielectric will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2102638