Structure of a spacer

Details Structure of a spacer Structure of a spacer

1999-05-19

2000-09-26

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257751, 257900, 257915, H01L 2976, H01L 2994

Patent

active

061246212

ABSTRACT:
A structure of a spacer in a semiconductor device is disclosed. Firstly, a gate without a spacer is provided on a substrate. A first insulating layer is formed on the sidewall of the gate. After a lightly doped drain is subsequently achieved in the substrate, a second insulating layer is formed on the first spacer. The process following this embodiment described above is to form a heavily doped drain in the substrate, then the whole MOSFET fabrication is completed. The present invention can enhance the stability of resistance of the gate and reduce pollution of the machine. Therefore, quality and efficiency of the fabrication of MOSFET will be enhanced.

REFERENCES:
patent: 5324974 (1994-06-01), Liao
patent: 5334870 (1994-08-01), Katada et al.

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