Incorporating barrier atoms into a gate dielectric using gas clu

Details Incorporating barrier atoms into a gate dielectric using gas clu Incorporating barrier atoms into a gate dielectric using gas clu

1998-05-14

2000-09-26

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257649, 257349, H01L 31119, H01L 2358, H01L 2701

Patent

active

061246204

ABSTRACT:
An integrated circuit fabrication process is provided for incorporating barrier atoms, preferably N atoms, within a gate dielectric/silicon-based substrate interfacial region using gas cluster ion beam implantation. Gas cluster ion beam implantation involves supercooling a gas to form clusters of atoms from the molecules in the gas. Those clusters of atoms are then ionized and accelerated to a target. Upon striking the target, the clusters of atoms break up into individual atoms. The energy of the ionized cluster is uniformly distributed to the individual atoms. As such, the atoms have a relatively low energy, and thus may be implanted to a shallow depth of less than 100 .ANG.. Barrier atoms positioned within a gate dielectric/substrate interfacial region serve to inhibit the diffusion of metal atoms and impurities from an overlying gate conductor into the substrate. Furthermore, the barrier layer provides protection against hot carrier injection into and entrapment within the gate dielectric.

REFERENCES:
patent: 4120700 (1978-10-01), Morimoto
patent: 4559096 (1985-12-01), Friedman et al.
patent: 4929489 (1990-05-01), Dreschhoff et al.
patent: 5070046 (1991-12-01), Hu
patent: 5111355 (1992-05-01), Anand et al.
patent: 5142438 (1992-08-01), Reinberg et al.
patent: 5186718 (1993-02-01), Tepman et al.
patent: 5246884 (1993-09-01), Jaso et al.
patent: 5281554 (1994-01-01), Shimada et al.
patent: 5304503 (1994-04-01), Yoon et al.
patent: 5330920 (1994-07-01), Soleimani et al.
patent: 5407870 (1995-04-01), Okada et al.
patent: 5552337 (1996-09-01), Kwon et al.
patent: 5596218 (1997-01-01), Soleimani et al.
patent: 5674788 (1997-10-01), Wristlers et al.
patent: 5677015 (1997-10-01), Hasegawa
patent: 5834353 (1998-11-01), Wu
patent: 5920103 (1999-07-01), Fulford et al.
Huang, et al, "The Influence of Ge-Implantation on the Electrical Characteristics of the Ultra-Shallow Junction Formed by Using Silicide as a Diffusion Source," IEEE Electron Device Letters, vol. 17, No. 3, Mar. 1996, pp. 88-90.
Yamada et al. "Gas Cluster Ion Beam Processing for ULSI Fabrication," Reprinted from Materials Research Society Symposium Proceedings vol. 427, Advanced Metallization for Future ULSI.
Raaijamakers "Low Temperature Metal --Organic Chemical Vapor Deposition of Advanced Barrier Layers for the Microelectronics Industry," Thin Solid Films, 247 (1994) pp. 85-93.

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