Si/SiGe MOSFET and method for fabricating the same

Details Si/SiGe MOSFET and method for fabricating the same Si/SiGe MOSFET and method for fabricating the same

1999-01-20

2000-09-26

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257348, 257350, 257616, H01L 2701, H01L 21249

Patent

active

06124614&

ABSTRACT:
The present invention relates to a metal silicon field effect transistor (MOSFET), and more particularly to a MOSFET, using a Si or SiGe channel to effectively adjust threshold voltage. The transistor according to the present invention can solve the problems, such as the punch-through caused by the short distance between the source region and the drain region, the decrease of the breakdown voltage between the source region and the drain region and the leakage current flowing into the bulk region beneath the channel due to the drain-induced barrier lowering. Furthermore, because the source region and the drain region are isolated from the semiconductor substrate by the lower insulation layer, the removal of the parasite junction capacitor speed up the transistor.

REFERENCES:
patent: 5358879 (1994-10-01), Brady et al.
patent: 5686735 (1997-11-01), Sim
patent: 5760442 (1998-06-01), Shigyo et al.
patent: 5792679 (1998-08-01), Nakato

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