FET with source-substrate connection and method for producing th

Details FET with source-substrate connection and method for producing th FET with source-substrate connection and method for producing th

1999-09-13

2000-09-26

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257327, 257329, 257331, 257332, 257712, 257713, 257720, H01L 2972

Patent

active

061246123

ABSTRACT:
An FET with a source-substrate connection (source-down FET) and a trench gate includes a drain zone of a first conductivity type provided on a first surface of a semiconductor layer of the first conductivity type that is disposed on a semiconductor substrate of the first conductivity type. The trench gate substantially penetrates the semiconductor layer. A source zone of the first conductivity type is provided at an end of the trench on a second surface of the semiconductor layer. A semiconductor zone of the second conductivity type is provided in a region next to the trench on the second surface of the semiconductor layer. The semiconductor zone has a surface which forms the second surface of the semiconductor layer together with the surface of the source zone. A method for producing the FET is also provided.

REFERENCES:
patent: 5945708 (1999-08-01), Tihanyi

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