Fishing – trapping – and vermin destroying
Patent
1994-09-15
1996-03-12
Fourson, George
Fishing, trapping, and vermin destroying
437 52, 437195, 437228, H01L 2144
Patent
active
054985706
ABSTRACT:
A method of forming a transistor for a semiconductor device from a semiconductor wafer comprises forming a first nitride layer over the front and back of the wafer, and forming a second nitride layer over the front and back of the wafer and over the first nitride layer. A first resist layer is formed over the front of the wafer and at least a portion of the second nitride layer over the front of the wafer is exposed. The first and second nitride layers are removed from the back of the wafer while, simultaneously, at least a portion of the exposed portion of the second nitride layer over the front of the wafer is removed. Next, a second layer of resist is formed leaving at least a portion of the first nitride layer exposed. Finally, the exposed portion of the first nitride layer is etched.
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Bilodeau Thomas G.
Fourson George
Martin Kevin D.
Micro)n Technology, Inc.
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