Semiconductor device and fabrication method using a germanium sa

Details Semiconductor device and fabrication method using a germanium sa Semiconductor device and fabrication method using a germanium sa

1998-12-01

2000-09-26

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438305, 438595, 438692, H01L 213205

Patent

active

061241881

ABSTRACT:
Semiconductor devices and fabrication processes which rely on the use of sacrificial gate electrode plugs are provided. In one embodiment, a germanium bearing plug is used to form a gate electrode. The germanium plug may advantageously be removed using a solution which leaves underlying portions of the oxide layer intact. In another embodiment, spacers are formed adjacent sidewalls of a sacrificial plug and active regions are formed adjacent the sacrificial plug. The sacrificial plug is then removed to form an opening between the spacers and a conductive layer is deposited over the substrate to form a gate electrode and active region contacts.

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