Process for forming a single-crystal film

Details Process for forming a single-crystal film Process for forming a single-crystal film

1976-06-14

1980-10-14

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156DIG102, 156DIG64, 156DIG71, 148175, 427 38, C30B 2308

Patent

active

042279615

ABSTRACT:
A process for forming a thin single-crystal film comprising the steps of heating and vaporizing a film material in a closed type crucible to form vapor of the film material, injecting the vapor into a high vacuum region to form clusters of atoms of said vapor, ionizing said clusters by bombarding them with electrons to produce ionized clusters, accelerating the ionized clusters onto a cleavage plane of a substrate material to form a high-quality crystal film deposited thereon and oriented according to the crystal axis of the substrate material, and separating the crystal film by dissolving the substrate material in a solvent.

REFERENCES:
patent: 2440135 (1948-04-01), Alexander
patent: 3192892 (1965-07-01), Hanson et al.
patent: 3281517 (1966-10-01), Hemmer et al.
patent: 3370980 (1968-02-01), Anderson
patent: 3406040 (1968-10-01), DaSilva et al.
patent: 3598384 (1971-08-01), Zucchinelli
patent: 3908183 (1975-09-01), Ennis, Jr.
patent: 3912826 (1975-10-01), Kennedy
Bis et al., "Thick Epitaxial Films of Phi-xSnxTe", J. of Vacuum Science and Tech. vol. 9 No. 1, pp. 226-230.

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