Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-05-05
1993-11-30
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257401, 257421, 257773, 257786, H01L 2722, H01L 2702, H01L 2710, H01L 2348
Patent
active
052668266
ABSTRACT:
Write transistors Q.sub.1W, Q.sub.2W, Q.sub.3W, Q.sub.4W are arranged in a line, and read transistors Q.sub.1R, Q.sub.2R, Q.sub.3R, Q.sub.4R are also arranged in a line. Wiring pads P11, P12, P13, P14 are arranged between the write and read transistors in a line parallel to both of the lines. Heat generated by a write operation in the write transistors does not significantly influence the read transistors in a read operation. The influences are exerted on the read transistors approximately uniformly, so that an offset voltage difference can be minimized in differential amplification.
Mitsubishi Denki & Kabushiki Kaisha
Prenty Mark V.
LandOfFree
Semiconductor integrated circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor integrated circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2098888