Semiconductor integrated circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257401, 257421, 257773, 257786, H01L 2722, H01L 2702, H01L 2710, H01L 2348

Patent

active

052668266

ABSTRACT:
Write transistors Q.sub.1W, Q.sub.2W, Q.sub.3W, Q.sub.4W are arranged in a line, and read transistors Q.sub.1R, Q.sub.2R, Q.sub.3R, Q.sub.4R are also arranged in a line. Wiring pads P11, P12, P13, P14 are arranged between the write and read transistors in a line parallel to both of the lines. Heat generated by a write operation in the write transistors does not significantly influence the read transistors in a read operation. The influences are exerted on the read transistors approximately uniformly, so that an offset voltage difference can be minimized in differential amplification.

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