Method of etching object to be processed including oxide or nitr

Details Method of etching object to be processed including oxide or nitr Method of etching object to be processed including oxide or nitr

1991-10-18

1994-04-12

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, 156657, 156662, 156667, 20419235, 20419237, H01L 2100

Patent

active

053022360

ABSTRACT:
According to this invention, a semiconductor wafer on which an oxide or nitride film is formed is loaded in a processing vessel, and when the oxide or nitride film of the semiconductor wafer is to be etched by a plasma of CHF.sub.3 gas in the processing vessel, CO gas is present in the plasma atmosphere.

REFERENCES:
patent: 4376672 (1983-03-01), Wang et al.
patent: 4582581 (1986-04-01), Flanigan et al.
patent: 4654112 (1987-03-01), Douglas et al.
patent: 4668338 (1987-05-01), Maydan et al.
patent: 4786361 (1988-11-01), Sekine et al.
patent: 4844773 (1989-07-01), Loewenstein et al.
Journal of American Society, vol. 106, No. 5, May 16, 1984, pp. 2787-2792, Keiko Takano, et al., "Quantum Chemical Interpretation of Oxidation Number as Applied to Carbon and Oxygen Compounds. Numbercial Analysis of the Electron Distribution with AB Initio Molecular Orbial Wave Functions".
Patent Abstracts of Japan, vol. 14, No. 151 (E-090) Mar. 22, 1990 & JP-A-02 010 726, Jan. 16, 1990, Sugino Shigeji: "Removal of Spontaneous Oxide Film on Surface of Semiconductor Substrate".

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