MOS temperature sensing circuit

Details MOS temperature sensing circuit MOS temperature sensing circuit

1986-06-06

1988-08-30

Moffitt, James W.

Static information storage and retrieval

Read/write circuit

Differential sensing

365189, 365207, 307310, G11C 704

Patent

active

047681705

ABSTRACT:
An MOS temperature sensing circuit formed on a silicon substrate which may be used for disabling portions of output drivers in EPROM at high temperatures. The circuit uses a first and second diode, one of which has substantially larger area than the other. The diodes are reverse biased through field-effect transistors. The leakage from the smaller diode is used to cancel the effects process variations on the leakage current of the larger diode, thereby providing a circuit with an output substantially dependent only on temperature.

REFERENCES:
patent: 3705392 (1972-12-01), Appelt
patent: 3835458 (1974-09-01), Mrazek
patent: 4215282 (1980-07-01), Brown et al.

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