Multilayered intermetallic connection for semiconductor devices

Details Multilayered intermetallic connection for semiconductor devices Multilayered intermetallic connection for semiconductor devices

1991-01-08

1992-12-15

Zimmerman, John

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

428651, 20419217, 427123, 257750, B32B 1520, C23C 1416, C23C 1434

Patent

active

051716429

ABSTRACT:
A low copper concentration multilayered, device interconnect metallurgy, comprises an aluminum-copper (<2 weight percent copper) conductor having formed on one of its surfaces a layer of an intermetallic compound formed from a Group IVA metal and aluminum from the aluminum-copper conductor. The intermetallic compound is formed so as to contain only the single phase line compound of the intermetallic compound.

REFERENCES:
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patent: 4612257 (1986-09-01), Broadbent
patent: 4673623 (1987-06-01), Gardner et al.
IBM Technical Disclosure Bulletin, vol. 21, No. 11, Apr. 1979, "Sputtered Metallurgy Process for Electromigration Improvement of Al-Cu" by P. S. Ho et al, pp. 4527-4528.
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IEEE V-MiConf., Jun. 25-26, 1985 "Homogeneous and Layered Films of Aluminum/Silicon with Titanium for Multilevel Interconnects" by D. S. Gardner et al., pp. 102-113.
MRS Symposia Proceedings, Fall, 1987, "Multilayered Interconnections for VLSI" by D. S. Gardner et al, pp. (1 of 12 through 12 of 12).
Electrical Society Extended Abstracts, vol. 84-2, Fall 1984, "Corrosion Behavior of Al-Cu Alloy Thin Films in Microelectronics" by J. Zahavi, M. Rotel, H. C. W. Hwang and P. A. Totta.
IBM Technical Disclosure Bulletin, vol. 13, No. 5, Oct. 1970, by J. J. Gniewek et al. "Titanium Overlay on Metallurgy" p. 1124.
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