Plasma etching indium tin oxide

Details Plasma etching indium tin oxide Plasma etching indium tin oxide

1990-06-04

1992-12-15

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 1566591, H01L 2100, B44C 122

Patent

active

051714019

ABSTRACT:
ITO is etched by a plasma containing CH.sub.3 .cndot. and Ar.sup.+. Argon ions cause a significant increase in the etch rate.

REFERENCES:
patent: 4217393 (1980-08-01), Staebler et al.
patent: 4812416 (1989-03-01), Hewig et al.
patent: 4878993 (1989-11-01), Rossi et al.
patent: 5032221 (1991-07-01), Roselle et al.

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