Method for detecting information stored in a MRAM cell having tw

Details Method for detecting information stored in a MRAM cell having tw Method for detecting information stored in a MRAM cell having tw

1996-05-08

1997-12-30

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Magnetic thin film

365171, 365158, G11C 1115

Patent

active

057038058

ABSTRACT:
A method for detecting and storing four states contained in a MRAM cell having two layers (11,13) which have different thicknesses is provided. A first magnetic field is applied to the MRAM cell, which causes a magnetoresistive change in the MRAM cell. A first and second states are detected based on the magnetoresistive change. A second magnetic field is further applied to the MRAM cell. A third and fourth states are detected based on the magnetoresistive change due to the second magnetic field.

REFERENCES:
patent: 3913080 (1975-10-01), Leo et al.
patent: 5173873 (1992-12-01), Wu et al.
patent: 5343422 (1994-08-01), Kung et al.
patent: 5375082 (1994-12-01), Katti et al.
patent: 5420819 (1995-05-01), Pohm
patent: 5477482 (1995-12-01), Prinz

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