Monolithically integrated semiconductor memory

Details Monolithically integrated semiconductor memory Monolithically integrated semiconductor memory

1982-01-19

1985-02-05

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Capacitors

365207, G11C 1124

Patent

active

044981546

ABSTRACT:
Monolithically integrated semiconductor memory with a matrix of identical storage cells arranged rows and columns in the form of a coordinated MOS field-effect transistors and storage capacitors in the form of an MOS capacitor and wherein, also, a comparator and a comparison cell is formed of one of the storage cells are associated with each matrix column, including a method for bridging over a point of interruption in a course of a bit line extending from one to another of at least two adjacent storage cells of at least one column. The bridging method may be an MOS field-effect transistor having a current-carrying path over which the point of interruption is bridged.

REFERENCES:
patent: 4118794 (1978-10-01), Mizuno et al.
patent: 4375086 (1983-02-01), van Velthoven
IEEE Journal of Solid-State Circuits, vol. Sc 7, No. 5, (Oct. 1972), pp. 338-339.

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