Static semiconductor memory device

Details Static semiconductor memory device Static semiconductor memory device

1996-06-28

1998-02-10

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 67, 257393, 257774, 257903, H01L 29786

Patent

active

057172404

ABSTRACT:
In one memory cell forming region of an SRAM, a field oxide film having edges straight and parallel to each other is formed. Active regions are formed sandwiching field oxide film. One word line is formed extending over field oxide film and active regions. On word line 6, gate electrodes of a driver transistor and GND lines are formed at prescribed positions. Gate electrodes of the driver transistor also serve as a gate electrode of a TFT. On gate electrodes of the driver transistor and on GND lines, polycrystalline silicon layers in which channel region and source/drain regions of the TFT are formed, are formed respectively. Consequently, a high performance SRAM which can reduce cell area and which has high reliability can be obtained.

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"A Split Wordline Cell for 16MB SRAM Using Polysilicon Sidewall Contacts", Kazuo Itabashi et al., IEDM 91, pp. 477-484.
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"Cornerless Active Area Cell and Bi-T-Mos Process for Sub-Half Micron SRAMS", M. Ishida et al., Jun. 9, 1994.
"A High Performance 0.6 um BICMOS SRAM Technology with Emitter-Base Self-Aligned Bipolar Transistors and Retrograde Well for MOS Transistors", Hiroki Honda et al., 1992 Symposium on VLSI Technology Digest of Technical Papers.

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