Nonlinear optical transistor

Details Nonlinear optical transistor Nonlinear optical transistor

1994-07-21

1998-02-10

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

257 85, 257 98, 372 45, 372 94, 359248, H01L 3112, H01L 3300, H01L 2715, H01S 318

Patent

active

057172250

ABSTRACT:
A nonlinear optical transistor comprises a pair of surface emitting semiconductor laser diodes, a phase modulator including a waveguide confined by a pair of first mirrors in the horizontal direction and located between the pair of surface emitting semiconductor laser diodes and a multiplicity of electrodes for controlling these elements. The transistor is characterized by its input optical signals for controlling the system; its high sensitivity; its capability to generate narrow, circularly symmetrical and single mode output signals; and its ability to carry out a multi-level processing of optical signals as well as computing operations and storage functions. These characteristics are obtained by introducing a pair of Fabry-Perot microresonators, each of the Fabry-Perot microresonators having a vertical optical axis, by utilizing a plurality of multilayer Bragg reflectors, wherein surface coatings are applied to the input faces to increase the reflection index to 1.0, the grating of the distributed Bragg reflectors being located above the phase modulator waveguide and the reference electrode being found on the bottom bases. The device has two input and two output optical contacts.

REFERENCES:
patent: 5001523 (1991-03-01), Lomashevich et al.
patent: 5260586 (1993-11-01), Kondoh
S. Kinoshita and K. Iga, "Circular Buried Heterostructure (CBH) GaAlAs/GaAs Surface Emitting Lasers", IEEE J. of Electronics QE-23(6):882-888 (Jun. 1987).
S.A. Lomashevich and Y.L. Bystrov, "Optical Transistor Concepts", Linaks Scientific-Technical Center, Leningrad; translated from Zhurnal Prikladnoi Spektroskopii 55(3):485-490 (Sep. 1991), original article submitted Feb. 12, 1991.
F.A.P. Tooley et al., "High gain signal amplification in an InSb transphasor at 77 K", Appl. Phys. Lett 43(9):807-809 (Nov. 1, 1983).

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