Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing
Patent
1992-08-24
1994-12-06
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for measuring, testing, or sensing
117 14, 117208, C30B 1520
Patent
active
053700775
ABSTRACT:
The present invention provides control of single crystal growth after the recovery from power failure when controlling crystal growth in an automatic mode. A source voltage is supplied to a controller 70 through a no-break power supply 62. At the time of recovery from power failure, the controller continues the automatic operation mode with the same control output as that stored when power failure is detected (84, 85) if the power failure time t is t .ltoreq.t.sub.1 (for example, 1 second), switches the control mode to the manual control mode with the same control output as that stored when the power failure is detected (86, 87) if t.sub.1 <t.ltoreq.t.sub.2 (for example, 5 seconds), stops the crystal growth operation and switches the control mode to the manual control mode (88, 89) if t.sub.2 <t.ltoreq.t.sub.3 (for example, 600 seconds), and separates the grown crystal from a melt 22 by upwardly moving the crystal and upwardly moves a crucible 16 (90) if t>t.sub.3.
REFERENCES:
patent: 3284172 (1966-11-01), Binder
patent: 3714452 (1973-01-01), Williamson
patent: 4384214 (1983-05-01), Crick et al.
patent: 4686379 (1987-08-01), Ohnari
patent: 4926357 (1990-05-01), Katsuoka et al.
patent: 5089238 (1992-02-01), Araki et al.
patent: 5156822 (1992-10-01), Whipple, III
Patent Abstracts of Japan, vol. 14, No. 270, Jun. 12, 1990, JP-A-20 80 400, Mar. 20, 1990.
Hirano Yoshihiro
Ozaki Atsushi
Urano Masahiko
Breneman R. Bruce
Garrett Felisa
Shin-Etsu Handotai Company Limited
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