Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1998-07-13
2000-06-13
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257774, 257750, 257752, 257760, H01L 2348, H01L 2352, H01L 2940
Patent
active
060752920
ABSTRACT:
In a semiconductor device, a metal oxide semiconductor (MOS) transistor is formed on a semiconductor substrate to have a gate electrode which is formed on a gate oxide film. The first insulating layer is formed to cover the semiconductor substrate and the MOS transistor. The second insulating layer is formed to cover the first insulating layer. The first wiring structure is formed on the first insulating layer. A part of the first wiring structure passes through the second insulating layer. The second wiring structure is not connected to the first wiring structure, and passes through the first and second insulating layers to be connected to the gate electrode. The second wiring structure has an antenna ratio of equal to or less than 1000. The third wiring structure is connected to the first and second wiring structures and formed on the second insulating layer to have the antenna ratio of equal to or less than 1000. Here, the antenna ratio is a ratio of surface area of a wiring structure to surface area of a gate oxide film.
REFERENCES:
patent: 5393701 (1995-02-01), Ko et al.
patent: 5650651 (1997-07-01), Bui
patent: 5828119 (1998-10-01), Katsube
Clark Jhihan B
NEC Corporation
Saadat Mahshid
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