Semiconductor device having MIS transistors and capacitor

Details Semiconductor device having MIS transistors and capacitor Semiconductor device having MIS transistors and capacitor

1998-01-09

2000-06-13

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257307, 257532, 257296, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

060752661

ABSTRACT:
The capacitor dielectric film (35) and the poly silicon layer (36) are formed on the silicide film (32) of the upper electrode LE of the capacitor. Further, after the Ti and TiN layer (37) has been formed on the poly silicon layer (36) by spattering, the formed Ti and TiN layer (37) is allowed to react upon the poly silicon layer (36), to form the TiSi.sub.2 layer (38) of high melting point silicide film on the poly silicon layer (36). After that, before forming the barrier layer (40) and the wiring layer (42), the substrate (10) is cleaned as pre-processing by applying a voltage to the substrate (10). In this cleaning process, since the capacitor dielectric film (35) is protected by the TiSi.sub.2 layer (38) of high melting point silicide film, it is possible to prevent the capacitor dielectric film (35) from being damaged during the cleaning process.

REFERENCES:
patent: 5065220 (1991-11-01), Paterson et al.
patent: 5396094 (1995-03-01), Matsuo
patent: 5814852 (1998-09-01), Sandhu et al.
patent: 5847424 (1998-12-01), Kang
patent: 5894160 (1999-04-01), Chan et al.
patent: 5933719 (1999-08-01), Nii et al.

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