Method for preventing oxidation in the formation of a via in an

Details Method for preventing oxidation in the formation of a via in an Method for preventing oxidation in the formation of a via in an

1996-05-10

1999-10-19

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

H01L 214763

Patent

active

059703733

ABSTRACT:
A method is provided for preventing the formation of oxides in the process of creating a connection aperture through an insulating layer overlying a copper conductor having a connection surface region. The method deposits at least two insulation layers over the copper connection region including a nitride dielectric material adjacent the connection region, and a second insulating material adjacent the nitride layer. An area of the second insulator is selectively removed to partially form a connection aperture extending to the nitride layer. Next, an area of the nitride layer, and any layer overlying the nitride layer, is selectively removed to form an aperture in registration with the aperture formed in the second layer. The completed connection aperture extends through the entire insulating layer to the connection region. The nitride layer protects the copper from processes that cause oxidation as the layers overlying the nitride layer are removed. The present invention also provides an integrated circuit with at least two insulation layers overlying a copper connection region, with a nitride layer adjacent the connection region.

REFERENCES:
patent: 5527739 (1996-06-01), Parillo et al.
patent: 5795819 (1998-08-01), Motsiff et al.
patent: 5817572 (1998-10-01), Chiang et al.
MRS Bulletin dated Feb. 23, 1993 entitled Copper Etching: New Chemical Approaches by Mark J. Hampden-Smith, Chemical Department and Toivo T. Kodas, Chemical Engineering Department, University of New Mexico, Albuquerque, NM 87131, consisting of 20 pages of text, Table 1 and 10 pages of drawings.

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