Method for the formation of silica-based coating film

Details Method for the formation of silica-based coating film Method for the formation of silica-based coating film

1998-05-01

2000-06-13

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438787, 438782, 438780, 438778, 438761, 438624, 427559, 427558, 427387, 427379, 427226, B05D 302, B05D 306, H01L 214763, H01L 2131

Patent

active

060749628

ABSTRACT:
Disclosed is a method for the formation of a silica-based coating film of a relatively large thickness in the manufacturing process of semiconductor devices and liquid crystal display panels by repeating the sequence consisting of coating of the surface with a coating solution containing a partial hydrolysis-condensation product of a trialkoxy silane compound followed by drying until a desired overall thickness of the coating film is obtained prior to a final baking treatment at 350 to 500.degree. C . The invention provides an improvement obtained by an ultraviolet irradiation treatment of the coating film intervening between a sequence of coating and drying and the next sequence of coating and drying so that the adhesion between the coating layers formed by repeating the sequence of coating and drying can be improved along with an advantage of absence of pinholes in the coating film.

REFERENCES:
patent: 5059448 (1991-10-01), Chandra et al.
patent: 5446088 (1995-08-01), Haluska
patent: 5496402 (1996-03-01), Sakamoto et al.
patent: 5554567 (1996-09-01), Wang
patent: 5614271 (1997-03-01), Shibuya et al.
patent: 5633534 (1997-05-01), Kalnitsky et al.
patent: 5762697 (1998-06-01), Sakamoto et al.

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