Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-08-27
2000-06-13
Meeks, Timothy
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438686, 427124, 427252, 427253, 4273831, 4273833, C23C 1616
Patent
active
060749458
ABSTRACT:
The present invention provides methods for the preparation of ruthenium metal films from liquid ruthenium complexes of the formula (diene)Ru(CO).sub.3 wherein "diene" refers to linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, fluorinated derivatives thereof, derivatives thereof additionally containing heteroatoms such as halide, Si, S, Se, P, As, N, or 0, or combinations thereof.
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Marsh Eugene P.
Vaartstra Brian A.
Meeks Timothy
Micro)n Technology, Inc.
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