Method of manufacturing a capacitor and a capacitor electrode in

Semiconductor device manufacturing: process – Having magnetic or ferroelectric component

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438253, 438648, H01L 218242

Patent

active

059703091

ABSTRACT:
A method of manufacturing a semiconductor capacitor electrode by growing a metal compound layer over polysilicon storage nodes. The metal compound layer readily growing on the polysilicon storage nodes, but not on portions of an insulating layer between adjacent polysilicon storage nodes.

REFERENCES:
patent: 5037775 (1991-08-01), Reisman
patent: 5079670 (1992-01-01), Tigelaar et al.
patent: 5418180 (1995-05-01), Brown
patent: 5506166 (1996-04-01), Sandhu et al.
patent: 5585300 (1996-12-01), Summerfelt

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