Shallow trench isolation formation with trench wall spacer

Details Shallow trench isolation formation with trench wall spacer Shallow trench isolation formation with trench wall spacer

1998-06-01

2000-06-13

Niebling, John F.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

438424, 438445, H01L 2176

Patent

active

06074927&

ABSTRACT:
A shallow trench isolation structure is formed which enables the growth of a high quality gate oxide at the trench edges and protects the field oxide from gouging during post-gate processing, such as during the local interconnect etch, thereby allowing the formation of high-quality implanted junctions. Embodiments include forming a photoresist mask directly on a pad oxide layer which, in turn, is formed on a main surface of a semiconductor substrate or an epitaxial layer on a semiconductor substrate. After masking, the substrate is etched to form a trench, an oxide liner is grown in the trench surface, and a polish stop layer is deposited in the trench on the oxide liner and on the pad oxide layer. The polish stop layer is then masked to the trench edges, and the polish stop in the trench is anisotropically etched, to remove the polish stop at the bottom of the trenches leaving a portion overlying the side surfaces and edges of the trench on the oxide liner. The trench is then filled with an insulating material, the insulating material is planarized, and the polish stop over the pad oxide layer is removed by anisotropic etching. Thus, the oxide liner is allowed to grow on the trench edges without the restraint of a polish stop, resulting in a thick, rounded oxide on the trench edges. The portion of the polish stop remaining in the trench and on the oxide liner at the trench edges serves as a protective spacer, protecting the field oxide from erosion during subsequent processing steps.

REFERENCES:
patent: 5399520 (1995-03-01), Jang
patent: 5930645 (1999-07-01), Lyons et al.

Affiliated with

Also associated with

Rating

Shallow trench isolation formation with trench wall spacer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Shallow trench isolation formation with trench wall spacer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Shallow trench isolation formation with trench wall spacer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2068140