Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1995-06-07
2000-06-13
Wilczewski, Mary
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438486, 438487, H01L 21225
Patent
active
060749016
ABSTRACT:
In a process for crystallizing an amorphous silicon film at a low temperature using a catalyst element, a system which automatically introduces the catalyst element into the amorphous silicon film is provided. The process steps are necessary for applying a solution containing an element which accelerates the crystallization of an amorphous silicon film are each effected in units 14 to 21. The substrate is transferred using a robot arm 12.
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Adachi Hiroki
Ohtani Hisashi
Costellia Jeffrey L.
Semiconductor Energy Laboratory Co,. Ltd.
Wilczewski Mary
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