LDD buried channel field effect semiconductor device and manufac

Details LDD buried channel field effect semiconductor device and manufac LDD buried channel field effect semiconductor device and manufac

1996-03-05

2000-11-14

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257345, 257408, H01L 2976, H01L 2994, H01L 31062

Patent

active

061473839

ABSTRACT:
An LDD-structured field-effect semiconductor device that can eliminate fluctuations in the threshold voltage caused by variations in the position of higher-density diffusion layers, thereby suppressing variations in the threshold voltage to a lower level. The junction depth of each of the lower-density diffusion layers in contact with a substrate is greater than the depth of a depletion layer at the place corresponding to a portion of the channel region contacting the source region. This prevents a change in the positional relationship between diffusion layers serving as, what are referred to as "pocket layers", and the depletion layer adjacent to the source, even though the position of the higher-density diffusion layers is varied in the longitudinal direction of the channel due to variations in the width of a spacer. Thus, there are no fluctuations in the quantity of impurities contained in the pocket layers within the depletion layer adjacent to the source, which would otherwise influence the threshold voltage.

REFERENCES:
patent: 4771012 (1988-09-01), Yabu et al.
patent: 5102816 (1992-04-01), Manukonda et al.
patent: 5266823 (1993-11-01), Noji et al.

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