Planarization of metal films for multilevel interconnects

Stock material or miscellaneous articles – Structurally defined web or sheet – Discontinuous or differential coating – impregnation or bond

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428901, 29571, 29576B, 141 15, 141187, 427 531, 427 94, B32B 300, H01L 2100, H01L 2104, B05D 306

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046817956

ABSTRACT:
In the fabrication of multilevel integrated circuits, each metal layer is anarized by heating to momentarily melt the layer. The layer is melted by sweeping laser pulses of suitable width, typically about 1 microsecond duration, over the layer in small increments. The planarization of each metal layer eliminates irregular and discontinuous conditions between successive layers. The planarization method is particularly applicable to circuits having ground or power planes and allows for multilevel interconnects. Dielectric layers can also be planarized to produce a fully planar multilevel interconnect structure. The method is useful for the fabrication of VLSI circuits, particularly for wafer-scale integration.

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