Short wavelength laser emitting diode with an improved GaN syste

Details Short wavelength laser emitting diode with an improved GaN syste Short wavelength laser emitting diode with an improved GaN syste

1996-05-20

1998-04-21

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

257 77, H01S 319

Patent

active

057426287

ABSTRACT:
A GaN system compound semiconductor double heterostructure in a light emission device comprises an active layer sandwiched between first and second cladding layers. Those three layers are made of GaN system compound semiconductor materials. The first, second and third GaN system compound semiconductor materials have first, second and third hexagonal crystal structures of basal planes tilted from a (0001) plane by an angle in the range of 0 degree to a few degrees, and the basal planes are substantially parallel to interfaces of the active layer to the first and second cladding layers. The GaN system compound semiconductor double heterostructure have a pair of opposite resonance faces vertical to a direction in which a light is emitted, and for each of the first, second and third hexagonal crystal structures, a pair of opposite planes in the six planes vertical to the basal plane forms the opposite resonance faces.

REFERENCES:
patent: 5247533 (1993-09-01), Okazaki et al.
patent: 5432808 (1995-07-01), Hatano et al.
patent: 5585648 (1996-12-01), Tischler
patent: 5604763 (1997-02-01), Kato et al.
Sasaki et al., "Substrate-Orientation Dependence of GaN Single-Crystal Films Grown by Metalorganic Vapor-Phase Epitaxy", J. Appl. Phys., vol. 61, No. 7, Apr. 1987, pp. 2533-2540.
Kato et al., "Selective Growth of Wurtzite GaN and Al.sub.x Ga.sub.1-x N on GaN/Sapphire Substrates by Metalorganic Vapor Phase Epitaxy", Journal of Crystal Growth, vol. 144, No. 3/4, Dec. 1994, pp. 133-140.
Tanaka et al., "Selective Growth of Gallium Nitride Layers with a Rectangular Cross-Sectional Shape and Stimulated Emission from the Optical Waveguides Observed by Photopumping", Applied Physics Letters, vol. 68, No. 7, Feb. 1996, pp. 976-978.
Y. Ueno et al., "Stable 30 mW Operation at 50.degree.C for Strained MQW AlGaInP Visible Laser Diodes", Electronic Letters, Apr. 23, 1992, vol. 28, No. 9, pp. 860-861.
S. Nakamura et al., Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes, Appl. Phys. Lett., vol. 64, No. 13, Mar. 28, 1994, pp. 1687-1689.

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