Stripping method for photoresist used as mask in Ch.sub.4 /H.sub

Etching a substrate: processes – Gas phase etching of substrate – Irradiating – ion implanting – alloying – diffusing – or...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

216 64, 216 66, 216 67, 438708, 438725, 438735, B44C 122

Patent

active

06074569&

ABSTRACT:
A method for stripping photoresist used as an etch mask in carbon based reactive ion etching includes flood exposing a patterned photoresist with a light and cyclically exposing the photoresist with an oxygen plasma in between the carbon based plasma. The step of cyclically exposing occurs after the step of flood exposing. The step of flood exposing includes the step of decomposing photosensitive compounds in the photoresist, while the step of cyclically exposing includes the step of cyclically removing layers of the photoresist.

REFERENCES:
patent: 4594769 (1986-06-01), Ellwanger
patent: 4705597 (1987-11-01), Gimpleson et al.
patent: 4816115 (1989-03-01), Horner et al.
patent: 5064748 (1991-11-01), Bobbio
patent: 5229258 (1993-07-01), Sezi et al.
patent: 5358599 (1994-10-01), Cathey et al.
patent: 5454906 (1995-10-01), Baker et al.
patent: 5501926 (1996-03-01), Cheng et al.
patent: 5567271 (1996-10-01), Chu et al.
patent: 5658697 (1997-08-01), Lin
R. Allen et al., Deep U.V. Hardening of Positive Photoresist Patterns. J. Electrochem. Soc., vol. 129, No. 6, pp. 1379-1381 (1982).
C. Constantine et al., Plasma Etching of III-V Semiconductors in CH4/H2/Ar Electron Cyclotron Resonance Discharges, J. Vac. Sci. Tech., vol. 8, No. 4, pp. 596-606 (1990).
J.W. Lee et al., Comparison of Masking Materials for High Microwave Power CH4/H2/Ar Etching of III-V Semiconductors, J. Vac. Sci. Tech., vol. 14, No. 3, pp. 1752-1757 (1996).
E. Gogolides et al., A New Method Which Increases the Si Content in Wet Sylation, and its Relation to the Thermal Effects During O2 Plasma Development, Micro, Eng., vol. 27, pp. 381-384 (1995).
J. Kaindl et al., Dry Etching of III/V Semiconductors; Fine Tuning of Pattern Transfer and Process Control, J. Electrochem. Soc., vol. 142, No. 7 pp. 2418-2424 (1995).
L. Peters, Stripping Today's Toughest Resists, Semiconductor International, pp. 58-64 (1992).
J.E. Schramm et al., Highly Selective Reactive Ion Etch Process for InP-based Device Fabricator Using Methane/Hydrogen/Argon, J. Vac. Sci. Tech. vol. 11, No. 6, pp. 2280-2283 (1993).
J.E. Schramm, Reactive Ion Etching of Indium-based Compounds Using Methane/Hydrogen/Argon, Dissertation, University of California, Santa Barbara, pp. 67-86 (1995).
Schramm, J.E., "Reactive Ion Etching of Indium-based Compounds Using Methane/Hydrogen/Argon" A Dissertation, Univ. of Ca., Santa Barbara, Jun. 1995 pp. 67-86.
Peters, L., Stripping Today's Toughest Resist' Semiconductor International, 1992 pp. 58-64.
Schramm, J.E., et al., "Highly selective reactive ion etch process for In-P-based device fabrication using methane/hydrogen/argon" J. Vac. Sci. Technol. B 11(6), (1993) pp. 2280-2283.
Constantine, C., et al. "Plasma etching of III-V semiconductors in CH.sub.4 H.sub.2 /Ar electron cyclotron resonance discharges" J. Vac. Sci. Technol. B 8(4), (1990) pp. 596-606.
Lee, J.W., et al. "Comparison of masking materials for high microwave power Ch.sub.4 /H.sub.2 /Ar etching of III-V semiconductors" J. Vac. Sci. Technol. B *14(3), (1996) pp. 1752-1757.
Ren, F., et al. "Reduction of sidewall roughness during dry etching of SiO.sub.2 " J. Vac. Sci. Technol. B 10(6) (1992) pp. 2407-2411.
Gogolides, E., et al. "A new method which increases the Si content in wet silylation, and its relation to the thermal effects during O.sub.2 plasma development" Microelectronic Engineering (1995) pp. 381-384.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Stripping method for photoresist used as mask in Ch.sub.4 /H.sub does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Stripping method for photoresist used as mask in Ch.sub.4 /H.sub, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stripping method for photoresist used as mask in Ch.sub.4 /H.sub will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2065812

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.