Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
2000-01-07
2000-11-14
Gupta, Yogendra
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438905, 510188, 510245, 510382, 216 58, 216104, H01L 21302
Patent
active
061470066
ABSTRACT:
A cleaning gas which is employed to remove an unnecessary deposited material formed in a thin film forming apparatus by thermal decomposition of pentaethoxytantalum or tetraethoxysilane without damaging a reactor, tools, parts and piping of a silicon oxide film-forming apparatus or a tantalum oxide film-forming apparatus. The cleaning gas comprises HF gas and at least one of an oxygen-containing gas, a fluorine gas, a chlorine fluoride gas, a bromine fluoride gas and an iodine fluoride gas.
REFERENCES:
patent: 5679215 (1997-10-01), Barnes et al.
patent: 6043162 (2000-03-01), Shimizu et al.
Kawashima Tadayuki
Mouri Isamu
Ohashi Mitsuya
Tamura Tetsuya
Central Glass Company Limited
Gupta Yogendra
Hamlin Derrick G.
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