Method of manufacturing wiring structure having buried plugs in

Details Method of manufacturing wiring structure having buried plugs in Method of manufacturing wiring structure having buried plugs in

1998-08-24

2000-11-14

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438685, 438675, H01L 2144

Patent

active

06146998&

ABSTRACT:
In a wiring forming method according to the present invention, an insulating layer is formed on a semiconductor substrate, and contact holes are formed in the insulating layer. A titanium layer is deposited on the insulating layer so as to be along inner surfaces of the contact holes. A first titanium nitride layer is formed on the titanium layer including the titanium layer formed in the contact holes. The deposition of the first titanium nitride layer is carried out under atmosphere which substantially includes no oxygen. A titanium oxynitride layer is deposited on the first titanium nitride layer. A second titanium nitride layer is deposited on the titanium oxynitride layer. Buried plugs are formed on the second titanium nitride layer formed in the contact holes. A wiring connected to the buried plugs are formed on the insulating layer. A barrier metal layer and the buried plugs are thus formed in the contact holes. According to such the structure, a stable electric contact can be obtained.

REFERENCES:
patent: 4926237 (1990-05-01), Sun et al.
patent: 5240880 (1993-08-01), Hindman et al.
patent: 5317187 (1994-05-01), Hindman et al.
patent: 5449954 (1995-09-01), Ito
patent: 5514908 (1996-05-01), Liao et al.
patent: 5602053 (1997-02-01), Zheng et al.
patent: 5668411 (1997-09-01), Hong et al.
patent: 5738917 (1998-04-01), Besser et al.
patent: 5858184 (1999-01-01), Fu et al.
Hiroshi Nishimura, et al. "Reliable Submicron Vias Using Al Alloy High Temp. Sputter Filling", 8th International IEEE VLSI Conf.pp-176, Jun. 1991 .

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