Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Bad bit

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

36523003, 3652257, G11C 700

Patent

active

059700033

ABSTRACT:
A semiconductor memory device comprising at least one memory mat comprised of a plurality of memory cells respectively provided at points where a plurality of word lines and spare word lines respectively intersect a plurality of bit lines and spare bit lines placed so as to intersect the word lines and spare word lines. In the semiconductor memory device, a plurality of fuse means allowed to open or remain unopen in accordance with stored information encoded with respect to addresses for specifying defective word lines or defective bit lines are used to control gate means based on their corresponding complementary signals. Thus, the gate means transmit signals for selecting their corresponding word lines or bit lines to thereby produce coincidence
on-coincidence signals.

REFERENCES:
patent: 5532966 (1996-07-01), Poteet et al.
patent: 5652725 (1997-07-01), Suma et al.
patent: 5691952 (1997-11-01), Sasaki et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2064858

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.