Static semiconductor memory device having active mode and sleep

Static information storage and retrieval – Read/write circuit

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Details

365229, 36518904, 36523006, G11C 1604

Patent

active

059699957

ABSTRACT:
A power supply control circuit of an SRAM cuts off supply of power supply voltage to any component other than memory cells and a word line potential fix circuit in a sleep period in which only retention of data is carried out. The word line potential fix circuit fixes a word line at a non-selection level in the sleep period. The potential on the word line never becomes unstable in the sleep period so that data in the memory cell is never destroyed. Accordingly, a static semiconductor memory device consuming less power and having a high data retention ability can be provided.

REFERENCES:
patent: 5262998 (1993-11-01), Mnich et al.
patent: 5615162 (1997-03-01), Houston
patent: 5783956 (1998-07-01), Ooishi

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