Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-06-23
1999-02-16
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257367, 257488, 257489, 257490, 257496, 257750, 438257, 438283, 438454, H01L 2904
Patent
active
058723838
ABSTRACT:
Disclosed is a semiconductor device, comprising a substrate having a first region and a second region surrounding the first region, a MOS transistor formed in the first region, a first conductive layer formed in the first region and constituting the lower layer of a two-layered gate electrode of the MOS transistor, a second conductive layer for isolation, the second conductive layer being formed in the second region and having an upper surface whose level is lower than that of the upper surface of the first conductive layer, a first insulating layer formed between the first and second regions, a second insulating layer formed on the second conductive layer, and a third conductive layer formed over the first conductive layer and the second insulating layer and constituting the upper layer of the two-layered gate electrode of the MOS transistor.
REFERENCES:
patent: 5648673 (1997-07-01), Yasuda
T. Iwamatsu, et al., "CAD-Compatible High-Speed CMOS/SIMOX Gate Array Using Field-Shield Isolation", IEEE Transactions on Electron Devices, vol. 42, No. 11, Nov. 1995, pp. 1934-1939.
Kabushiki Kaisha Toshiba
Wojciechowicz Edward
LandOfFree
Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2064726