Semiconductor device including a pair of field effect transistor

Details Semiconductor device including a pair of field effect transistor Semiconductor device including a pair of field effect transistor

1995-04-19

1999-02-16

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257329, 257622, H01L 2976

Patent

active

058723757

ABSTRACT:
A field effect transistor is formed on a side surface of a rectangular parallelepiped depression formed in the upper surface of a single crystalline substrate. The orientation of the side surface is substantially selected in the (100) plane or an equivalent plane of the crystalline structure of the substrate. A gate electrode is formed on the side surface with a gate insulating film therebetween. Source and Drain regions are formed in the bottom of the depression and the surface of the substrate adjacent to the depression by ion implantation with the gate electrode as a mask.

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patent: 5302843 (1994-04-01), Yamazaki

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