Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1998-03-02
2000-11-14
Chaudhuri, Olik
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438161, 438162, 257347, H01L 2100, H01L 2184
Patent
active
061469270
ABSTRACT:
The present invention provide a semiconductor device having a first insulating layer provided in contact with a side of an active layer in the direction of thickness thereof, a second insulating layer provided in contact with the other side of the active layer in the direction of the thickness thereof, a first gate electrode for applying a predetermined voltage to the active layer through the first insulating layer, and a second gate electrode for applying a predetermined voltage to the active layer through the second insulating layer. In the semiconductor device, a leak current between the drain and the source is suppressed, thereby obtaining a large driving current.
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Chaudhuri Olik
Coleman William David
Sony Corporation
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