Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-02-07
1999-02-16
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438638, 438639, 438666, 438700, H01L 2144
Patent
active
058720561
ABSTRACT:
Semiconductor methods of forming self-aligned contact openings are described. In a preferred implementation, a conductor is formed over a substrate. A first layer of material is formed over the conductor. A second layer of material is formed over the first layer of material. The first and second layer materials can be etchably different. Portions of the first and second layers are then removed to form a contact opening to the conductor. According to one aspect, the second layer material is removed at a slower rate than the rate at which first layer material is removed. According to another aspect, portions of such layers are removed at the same time. According to still another aspect of the invention, the second layer material comprises a sacrificial spun-on material.
REFERENCES:
patent: 5198386 (1993-03-01), Gonzalez
patent: 5286344 (1994-02-01), Blalock et al.
patent: 5286674 (1994-02-01), Roth et al.
patent: 5451543 (1995-09-01), Woo et al.
patent: 5702981 (1997-12-01), Maniar et al.
Everhart Caridad
Micro)n Technology, Inc.
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