Use of an oxide surface to facilitate gate break on a carrier su

Details Use of an oxide surface to facilitate gate break on a carrier su Use of an oxide surface to facilitate gate break on a carrier su

1998-02-05

1999-10-19

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Encapsulated

438476, H01L 23495

Patent

active

059694270

ABSTRACT:
An encapsulant molding technique used in chip-on-board encapsulation wherein an oxidizable metal layer is patterned on a substrate and the oxidizable metal layer is oxidized to facilitate removal of unwanted encapsulant material. The oxidizable metal layer which adheres to the substrate is applied over a specific portion of the substrate. The oxidizable metal layer is oxidized to form a metal oxide layer which does not adhere to encapsulant materials.

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