Method for producing a semiconductor device and a semiconductor

Details Method for producing a semiconductor device and a semiconductor Method for producing a semiconductor device and a semiconductor

1998-02-19

1999-10-19

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257917, 438523, H01L 2994

Patent

active

059693983

ABSTRACT:
A method for producing a semiconductor device which comprises a step for forming a gate electrode on a main surface of a semiconductor substrate via a gate oxide film, and a step for directing plasma ions with a gas mixture comprising a first gas containing a hydride of an impurity element and a second gas containing a fluoride of the impurity element into a surface of the semiconductor substrate.

REFERENCES:
patent: 5489550 (1996-02-01), Moshlehi
patent: 5641707 (1997-06-01), Moslehi
"Radical Kinetics in a Fluorocarbon Etching Plasma," Jan. J. Appl. Phys. vol. 32 (1993) pp. 3040-3044.
"Formation of a fluorocarbon film having a high thermal resistance and a low dielectric constant, using plasma phase epitaxy" Appl. Phys. vol. 65, No. 11, 1996, pp. 1153-1157.
"Anomalous behavior of shallow BF3 plasma immersion ion implantation," J. Vac. Sci. Technol. B 12(2), 1994, pp. 956-961.
"LSI process engineering (2nd Ed.)," pp. 88-89, Ohm Co.

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