Thermal ink jet printheads with power MOS driver devices having

Details Thermal ink jet printheads with power MOS driver devices having Thermal ink jet printheads with power MOS driver devices having

1994-11-23

1999-10-19

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257379, 257408, 257409, 257536, H01L 2976, H01L 2994, H01L 31062, H01L 31113, H01L 31119

Patent

active

059693924

ABSTRACT:
A high voltage MOS transistor, for use in a thermal ink jet printhead, is fabricated with a single, uniformly thick layer of polysilicon that serves as a field plate over the drift region and a gate over the channel region. The fabrication of the drift region and associated drift oxide is performed in a sequence independent of the device channel stop and field oxide fabrication, allowing the drift region to be optimized by varying the thickness of the drift oxide. Using a field plate to increase the breakdown voltage of the device by reducing the concentration of the electric field, the device transconductance is increased by increasing the doping of the drift region without an attendant decrease in breakdown voltage.

REFERENCES:
patent: 4599576 (1986-07-01), Yoshida
patent: 4947192 (1990-08-01), Hawkins et al.
patent: 5010355 (1991-04-01), Hawkins et al.
patent: 5075250 (1991-12-01), Hawkins et al.
patent: 5089871 (1992-02-01), Fujihara
"Integrated High-Voltage/Low-Voltage MOS Devices"; IEDM; 1981; p. 259.
"850V NMOS Driver with Active Outputs"; IEDM; 1984; p. 266.

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