Semiconductor device with unbreakable testing elements for evalu

Details Semiconductor device with unbreakable testing elements for evalu Semiconductor device with unbreakable testing elements for evalu

1997-02-26

1999-10-19

Dutton, Brian

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257311, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

059693819

ABSTRACT:
Testing elements are disposed to prevent breakage by locating them such that their entire lower surface is formed directly on an insulating layer of a semiconductor device. These testing elements may be used with a fin type storage node electrode projecting from an inter-level insulating layer so as to use the top, side and back surfaces thereof for accumulation of electric charge. These testing elements may be used for evaluating properties of the layers of the storage node electrode and be concurrently formed directly on the inter-level insulating layer, thereby preventing the testing elements from undesirable breakage.

REFERENCES:
patent: 5661065 (1997-08-01), Koga
patent: 5744389 (1998-04-01), Kim
patent: 5759893 (1998-06-01), Wu

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