Semiconductor memory device and fabricating method

Details Semiconductor memory device and fabricating method Semiconductor memory device and fabricating method

1997-11-03

2000-10-31

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, H01L 27108

Patent

active

061406732

ABSTRACT:
In a high-integration DRAM device using a SOI substrate, a conductive film for connecting the source region or the drain region to the polysilicon film filled in the trench is formed in an etched-off portion of the insulating layer of the SOI substrate.

REFERENCES:
patent: 4791610 (1988-12-01), Takemae
patent: 4907047 (1990-03-01), Kato et al.
patent: 5414285 (1995-05-01), Nishihara
patent: 5442211 (1995-08-01), Kita
patent: 5493137 (1996-02-01), Satoh et al.
patent: 5495439 (1996-02-01), Morihara
patent: 5770876 (1998-06-01), Lam et al.

Affiliated with

Also associated with

Rating

Semiconductor memory device and fabricating method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device and fabricating method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device and fabricating method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2054921